Tokiyoshi Umeda: search on Z-Library

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1

[IEEE 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Kyoto, Japan (2019.7.2-2019.7.5)] 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Ga-Sn-O thin film thermoelectric conversion devise fabricated by Mist CVD method

Aramaki, Tatsuya, Matsuda, Tokiyoshi, Umeda, Kenta, Uenuma, Mutsunori, Kimura, Mutsumi

Year:

2019

Language:

english

File:

PDF, 1.30 MB

english, 2019

2

[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Thermoelectric Conversion Devise Using Ga-Sn-O Thin Film Prepared by Mist CVD Method

Aramaki, Tatsuya, Nomura, Ryuki, Matsuda, Tokiyoshi, Kimura, Mutsumi, Umeda, Kenta, Uenuma, Mutsunori, Uraoka, Yukiharu

Year:

2018

Language:

english

File:

PDF, 483 KB

english, 2018

3

[IEEE 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Kyoto, Japan (2019.7.2-2019.7.5)] 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Mass Production Technology of Flexible AMOLED Displays and Improvement of the OLED Device Characteristics

Tsukamoto, Yuto, Umeda, Tokiyoshi, Mizusaki, Masanobu, Shibasaki, Masakazu, Uetake, Naoki, Kawato, Shinichi, Shimada, Shinji

Year:

2019

Language:

english

File:

PDF, 1.83 MB

english, 2019

4

High-mobility bottom-contact thin-film transistor based on anthracene oligomer

Daisuke Kumaki, Tokiyoshi Umeda, Toshiyasu Suzuki, Shizuo Tokito

Journal:

Organic Electronics

Year:

2008

Language:

english

File:

PDF, 222 KB

english, 2008

5

5‐5: Late‐News Paper: Low‐Power‐Consumption Flexible AMOLED Display with Highly Efficient TE‐Type Blue OLED

Umeda, Tokiyoshi, Tsukamoto, Yuto, Zhang, Bai, Jo, Tomoaki, Imada, Hiroshi, Kawato, Shinichi, Mitsui, Seiichi

Journal:

SID Symposium Digest of Technical Papers

Year:

2019

Language:

english

File:

PDF, 2.97 MB

english, 2019

6

P‐44: Long Lifetime and High Performance OLED Display with Wide Temperature Range for Automotive Application

Mizusaki, Masanobu, Shibasaki, Masakazu, Tsuchiya, Hiroshi, Tsukamoto, Yuto, Umeda, Tokiyoshi, Nakamura, Kei, Ohshita, Toshiaki, Shimada, Shinji

Journal:

SID Symposium Digest of Technical Papers

Year:

2019

Language:

english

File:

PDF, 2.97 MB

english, 2019

7

High air stability of threshold voltage on gate bias stress in pentacene TFTs with a hydroxyl-free and amorphous fluoropolymer as gate insulators

Tokiyoshi Umeda, Daisuke Kumaki, Shizuo Tokito

Journal:

Organic Electronics

Year:

2008

Language:

english

File:

PDF, 131 KB

english, 2008

8

Significant improvement of electron mobility in organic thin-film transistors based on thiazolothiazole derivative by employing self-assembled monolayer

Kumaki, Daisuke, Ando, Shinji, Shimono, Satoshi, Yamashita, Yoshiro, Umeda, Tokiyoshi, Tokito, Shizuo

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 352 KB

english, 2007

9

Effect of ZnO layer on characteristics of conducting polymer/C 60 photovoltaic cell

Shirakawa, Tomoki, Umeda, Tokiyoshi, Hashimoto, Yuuki, Fujii, Akihiko, Yoshino, Katsumi

Journal:

Journal of Physics D Applied Physics

Year:

2004

Language:

english

File:

PDF, 328 KB

english, 2004

10

Surface-energy-dependent field-effect mobilities up to 1 cm[sup 2]/V s for polymer thin-film transistor

Umeda, Tokiyoshi, Kumaki, Daisuke, Tokito, Shizuo

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 328 KB

english, 2009

11

Fabrication of Organic Photovoltaic Cells with Interpenetrating Heterojunction of Conducting Polymer and C 60 by Spray Method

Noda, Hideki, Umeda, Tokiyoshi, Mizukami, Hiroyoshi, Fujii, Akihiko, Ozaki, Masanori

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 166 KB

english, 2006

12

High-mobility and air-stable organic thin-film transistors with highly ordered semiconducting polymer films

Umeda, Tokiyoshi, Tokito, Shizuo, Kumaki, Daisuke

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 1.08 MB

english, 2007

13

Ultraviolet light responses in photovoltaic properties of TiO[sub 2]∕conducting polymer heterostructure devices

Umeda, Tokiyoshi, Hashimoto, Yuuki, Mizukami, Hiroyoshi, Shirakawa, Tomoki, Fujii, Akihiko, Yoshino, Katsumi

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 311 KB

english, 2004

14

Influence of H[sub 2]O and O[sub 2] on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on SiO[sub 2] gate-insulator surface

Kumaki, Daisuke, Umeda, Tokiyoshi, Tokito, Shizuo

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 687 KB

english, 2008

15

Solvent Dependence of Interpenetrating Interface Formation in Organic Photovoltaic Cells with Heterojunction of Conducting Polymer and C 60

Fujii, Akihiko, Mizukami, Hiroyoshi, Umeda, Tokiyoshi, Shirakawa, Tomoki, Hashimoto, Yuuki, Yoshino, Katsumi

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 132 KB

english, 2004

16

Dependences of Characteristics of Polymer Solar Cells Based on Bulk Heterojunction of Poly(3-hexylthiophene) and C 60 on Composite Ratio and Annealing Temperature

Umeda, Tokiyoshi, Noda, Hideki, Shibata, Takeshi, Fujii, Akihiko, Yoshino, Katsumi, Ozaki, Masanori

Journal:

Japanese Journal of Applied Physics

Year:

2006

File:

PDF, 347 KB

2006

17

Effect of Indium-Tin Oxide Surface Micromodification and Improvement of Long-Wavelength Sensitivity on Photovoltaic Properties of Photovoltaic Cell with Conducting Polymer/C 60 Interpenetrating Heterostructure

Hashimoto, Yuuki, Umeda, Tokiyoshi, Mizukami, Hiroyoshi, Fujii, Akihiko, Ozaki, Masanori, Yoshino, Katsumi

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 339 KB

english, 2005

18

Improvement of Characteristics of Organic Photovoltaic Devices Composed of Conducting Polymer-Fullerene Systems by Introduction of ZnO Layer

Umeda, Tokiyoshi, Shirakawa, Tomoki, Fujii, Akihiko, Yoshino, Katsumi

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 391 KB

english, 2003

19

Photoconduction Properties in Mono- and Disubstituted Polyacetylene Films

Umeda, Tokiyoshi, Tamura, Tatsuhiko, Nishihara, Yusuke, Shirakawa, Tomoki, Fujii, Akihiko, Masuda, Toshio, Yoshino, Katsumi

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 406 KB

english, 2002

20

Photocurrent Enhancement in Conducting Polymer Device by Doping with Endohedral Metallofullerene La@C 82

Fujii, Akihiko, Umeda, Tokiyoshi, Shirakawa, Tomoki, Akasaka, Takeshi, Yoshino, Katsumi

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 89 KB

english, 2002

21

Interpenetrating Interface in Organic Photovoltaic Cells with Heterojunction of Poly(3-hexylthiophene) and C 60

Fujii, Akihiko, Shirakawa, Tomoki, Umeda, Tokiyoshi, Mizukami, Hiroyoshi, Hashimoto, Yuuki, Yoshino, Katsumi

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 696 KB

english, 2004

22

Fabrication of Interpenetrating Semilayered Structure of Conducting Polymer and Fullerene by Solvent Corrosion Method and Its Photovoltaic Properties

Umeda, Tokiyoshi, Hashimoto, Yuuki, Mizukami, Hiroyoshi, Fujii, Akihiko, Yoshino, Katsumi

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 372 KB

english, 2005

23

Improvement of Sensitivity in Long-Wavelength Range in Organic Thin-Film Solar Cell with Interpenetrating Semilayered Structure

Umeda, Tokiyoshi, Hashimoto, Yuuki, Mizukami, Hiroyoshi, Noda, Hideki, Fujii, Akihiko, Ozaki, Masanori, Yoshino, Katsumi

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 399 KB

english, 2006

24

[IEEE 2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2016.6.23-2016.6.24)] 2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Characteristic evaluation of Ga-Sn-O thin films fabricated using RF magnetron sputtering

Kato, Yuta, Umeda, Kenta, Nishimoto, Daiki, Matsuda, Tokiyoshi, Kimura, Mutsumi

Year:

2016

Language:

english

File:

PDF, 383 KB

english, 2016

25

Rare-metal-free high-performance Ga-Sn-O thin film transistor

Matsuda, Tokiyoshi, Umeda, Kenta, Kato, Yuta, Nishimoto, Daiki, Furuta, Mamoru, Kimura, Mutsumi

Journal:

Scientific Reports

Year:

2017

Language:

english

File:

PDF, 950 KB

english, 2017

26

Room-temperature fabrication of a Ga-Sn-O thin-film transistor

Matsuda, Tokiyoshi, Takagi, Ryo, Umeda, Kenta, Kimura, Mutsumi

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 597 KB

english, 2017

27

[IEEE 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2017.6.29-2017.6.30)] 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Planar device using In-Ga-Zn-O semiconductor for synapse element in neural network

Yamakawa, Daiki, Koga, Yuki, Ikushima, Keisuke, Umeda, Kenta, Hori, Toshimasa, Yokoyama, Tomoharu, Watada, Koki, Tanaka, Ryo, Kimura, Mutsumi, Matsuda, Tokiyoshi

Year:

2017

Language:

english

File:

PDF, 509 KB

english, 2017

28

[IEEE 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2017.6.29-2017.6.30)] 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Room-temperature forming of Ga-Sn-O film for thin-film transistors

Takagi, Ryo, Umeda, Kenta, Kimura, Mutsumi, Matsuda, Tokiyoshi

Year:

2017

Language:

english

File:

PDF, 353 KB

english, 2017

29

[IEEE 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2017.6.29-2017.6.30)] 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Cross-point device using In-Ga-Zn-O semiconductor for synapse element in neural network

Tanaka, Ryo, Koga, Yuki, Ikushima, Keisuke, Umeda, Kenta, Hori, Toshimasa, Yokoyama, Tomoharu, Watada, Koki, Yamakawa, Daiki, Kimura, Mutsumi, Matsuda, Tokiyoshi

Year:

2017

Language:

english

File:

PDF, 523 KB

english, 2017

30

49.2: Invited Paper: Research and Applications of Amorphous Metal-Oxide Semiconductor Devices - In-Ga-Zn-O and Ga-Sn-O Thin-Film Devices -

Kimura, Mutsumi, Kamiya, Toshio, Matsuda, Tokiyoshi, Umeda, Kenta, Fukawa, Asuka, Nakashima, Yasuhiko

Journal:

SID Symposium Digest of Technical Papers

Year:

2018

File:

PDF, 531 KB

2018